We demonstrate experimentally all-optical switching on a silicon chip at telecom wavelengths. The switching device comprises a compact ring resonator formed by horizontal silicon slot waveguides filled with highly nonlinear silicon nanocrystals in silica. When pumping at power levels about 100 mW using 10 ps pulses, more than 50% modulation depth is observed at the switch output. The switch performs about 1 order of magnitude faster than previous approaches on silicon and is fully fabricated using complementary metal oxide semiconductor technologies.
A compact waveguide crossing structure with low transmission losses and negligible crosstalk is demonstrated for silicon-on-insulator circuits. The crossing structure is based on a mode expander optimized by means of a genetic algorithm leading to transmission losses lower than 0.2 dB and crosstalk and reflection losses below 40 dB in a broad bandwidth of 20 nm. Furthermore, the resulting crossing structure has a footprint of only 6x6 microm(2) and does not require any additional fabrication steps.
The nanoparticle volume fraction employed in the figures and text was 3.4%, rather than the erroneously quoted 0.8%. The abscissa in Figures 1 and 2 should say nanoparticle radius and not nanoparticle diameter. We also note that the experimentally adjusted value of δ 3 employed in eq 5 is 38.8 Å 3 , rather than the actual geometrical volume. None of the conclusions in the paper is affected by the previous corrections. We thank Shidong Wang and Ivana Savic ´for pointing out these errata.
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