Thin films of the electron-doped infinite-layer cuprate superconductor Sr1−xLaxCuO2 (SLCO) with doping x ≈ 0.15 were grown by means of pulsed laser deposition. (001)-oriented KTaO3 and SrTiO3 single crystals were used as substrates. In case of SrTiO3, a BaTiO3 thin film was deposited prior to SLCO, acting as buffer layer providing tensile strain to the SLCO film. To induce superconductivity, the as-grown films were annealed under reducing conditions, which will be described in detail. The films were characterized by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, Rutherford backscattering spectroscopy, and electric transport measurements at temperatures down to T = 4.2 K. We discuss in detail the influence of different process parameters on the final film properties.
Grain-boundary bicrystal Josephson junctions of the electron-doped infinite-layer superconductor Sr 1−x La x CuO 2 (x = 0.15) were grown by pulsed laser deposition. BaTiO 3 -buffered 24 • [001]-tilt symmetric SrTiO 3 bicrystals were used as substrates. We examined both Cooper pair (CP) and quasiparticle (QP) tunneling by electric transport measurements at temperatures down to 4.2K. CP tunneling revealed an extraordinary high critical current density for electron-doped cuprates of j c > 10 3 A/cm 2 at 4.2 K. Thermally activated phase slippage was observed as a dissipative mechanism close to the transition temperature. Out-of-plane magnetic fields H revealed a remarkably regular Fraunhofer-like j c (H ) pattern as well as Fiske and flux-flow resonances, both yielding a Swihart velocity of 3.1 × 10 6 m/s. Furthermore, we examined the superconducting gap by means of QP tunneling spectroscopy. The gap was found to be V shaped with an extrapolated zero-temperature energy gap 0 ≈ 2.4 meV. No zero-bias conductance peak was observed.
Thin-film planar tunnel junctions with the electron-doped infinite-layer superconductor Sr 1−x La x CuO 2 (SLCO) with x ∼ 0.15 as bottom electrode, a thin Au interlayer, and Nb as top electrode were fabricated and characterized. Measurements of electric transport across these junctions provide information on the interface and surface properties of the SLCO thin films. No Cooper pair tunneling is observed; however, nonlinear current-voltage characteristics give evidence for quasiparticle (QP) tunneling across a thin insulating SLCO barrier at the SLCO/Au interface, with a single gap value ∼1.4 meV, originating from superconducting Nb. The absence of a superconducting SLCO gap in the QP conductance curves indicates a thin normal-conducting SLCO layer below the insulating SLCO barrier. To examine its origin, x-ray photoelectron spectroscopy (XPS) and x-ray Auger-electron spectroscopy (XAES) on SLCO thin films were performed. We observe a Cu valence of +1 in the SLCO surface layer (within ∼3 nm thickness) and of +2 in deeper regions, as expected for fully oxidized CuO 2 planes in the bulk. Hence, the XPS and XAES results for the SLCO films are consistent with the QP tunneling spectra observed for our planar SLCO/Au/Nb junctions.
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