Because most people possess positive associations about themselves, most people prefer things that are connected to the self (e.g., the letters in one's name). The authors refer to such preferences as implicit egotism. Ten studies assessed the role of implicit egotism in 2 major life decisions: where people choose to live and what people choose to do for a living. Studies 1-5 showed that people are disproportionately likely to live in places whose names resemble their own first or last names (e.g., people named Louis are disproportionately likely to live in St. Louis). Study 6 extended this finding to birthday number preferences. People were disproportionately likely to live in cities whose names began with their birthday numbers (e.g., Two Harbors, MN). Studies 7-10 suggested that people disproportionately choose careers whose labels resemble their names (e.g., people named Dennis or Denise are overrepresented among dentists). Implicit egotism appears to influence major life decisions. This idea stands in sharp contrast to many models of rational choice and attests to the importance of understanding implicit beliefs.

From the perspective of implicit egotism people should gravitate toward others who resemble them because similar others activate people's positive, automatic associations about themselves. Four archival studies and 3 experiments supported this hypothesis. Studies 1-4 showed that people are disproportionately likely to marry others whose first or last names resemble their own. Studies 5-7 provided experimental support for implicit egotism. Participants were more attracted than usual to people (a) whose arbitrary experimental code numbers resembled their own birthday numbers, (b) whose surnames shared letters with their own surnames, and (c) whose jersey number had been paired, subliminally, with their own names. Discussion focuses on implications for implicit egotism, similarity, and interpersonal attraction.

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B. W. Pelham, M. C. Mirenberg, and J. T. Jones (2002) argued that most people prefer stimuli that are associated with the self, a preference they called implicit egotism. In support of implicit egotism, Pelham et al presented evidence from 10 archival studies showing that people gravitate toward careers and places of residence that resemble their names or birthday numbers. M. Gallucci (2003) argued that alternate analyses of the same data provide strong evidence against implicit egotism. Whereas Gallucci was correct that Pelham et al's original analyses were flawed, their results remain significant even when more conservative tests are used. The authors also present new data in support of implicit egotism, including exhaustive studies of (a) common surnames and US city names and (b) common surnames and street names. The new studies also revealed that as sample sizes grow larger, studies are more likely to produce evidence of implicit egotism.

People gravitate toward people, places, and things that resemble the self. We refer to this tendency as implicit egotism, and we suggest that it reflects an unconscious process that is grounded in people's favorable self-associations. We review recent archival and experimental research that supports this position, highlighting evidence that rules out alternate explanations and distinguishes implicit egotism from closely related ideas such as mere exposure. Taken together, the evidence suggests that implicit egotism is an implicit judgmental consequence of people's positive self-associations. We conclude by identifying promising areas for future research.

A range of recent academic, policy and practice-focused work in the UK and internationally has identified a need for more focused attention on the role of digital literacies in enabling young people to more effectively navigate their way through an increasingly complex, digitally mediated world. In this article, we explore the main debates taking place around the prevalence of digital media in the early twenty-first century, with emphasis on the role of pervasive digital media in educational settings. Focusing on the practice-based project, Digital Commonwealth, a series of critical insights are drawn, highlighting the difficulties facing educational authorities and young people in dealing with the opportunities and threats brought about by digital media. We conclude that a critical digital citizenship agenda needs to be embedded in educational narratives, where young people are, through practice, asked to ponder how digitally mediated publics operate in the school setting and beyond. Integrating 'making' and 'thinking critically' about the benefits and dangers of pervasive digital media in and outside of school is imperative. Our study suggests that there remain significant inequities in terms of provision across schools, access to suitable infrastructure and equipment, and the presence of qualified and confident staff with the requisite digital leadership attributes to enable digital media projects to be integrated into everyday learning practices. Major events, like the Commonwealth Games, can precipitate and accelerate uptake of new approaches and innovative thinking but they do not represent a panacea for the systemic development of critical digital citizenship over time.

An electrostatic force microscope was used to write and image localized dots of charge in a double barrier CeO 2 /Si/CeO 2 /Si͑111͒ structure. By applying a relatively large tip voltage and reducing the tip to sample separation to 3-5 nm, charge dots 60-200 nm full width at half maximum of both positive and negative charge have been written. The total stored charge is found to be Q ϭϮ(20-200)e per charge dot. These dots of charge are shown to be stable over periods of time greater than 24 h, with an initial charge decay time constant of ϳ9.5 h followed by a period of much slower decay with Ͼ24 h. The dependence of dot size and total stored charge on various writing parameters such as tip writing bias, tip to sample separation, and write time is examined. © 1999 American Institute of Physics. ͓S0003-6951͑99͒04035-8͔ Cerium oxide (CeO 2 ) is an insulating material with a lattice mismatch of only 0.35% to silicon ͑Si͒ and an energy band gap of ϳ5.5 eV. This attractive set of properties has the potential to lead to a fully functional silicon heterojunction technology. A significant amount of work has been done examining the growth and characterization of CeO 2 crystals on Si, 1-5 and the growth of single crystal Si on to CeO 2 /Si heterostructures 6 has been recently reported. Based on these promising results, a silicon resonant tunneling diode, an improved silicon-on-insulator technology, and stacked silicon electronics have all been proposed. A valuable and interesting addition to this array of technologies would be the capacity for integrated electrostatic data storage.In this letter, we describe the localized charging and subsequent imaging of a double barrier CeO 2 /Si/CeO 2 /Si͑111͒ structure by electrostatic force microscopy ͑EFM͒.7-9 The controllable writing of both positive and negative localized dots of charge with long lifetimes is described and it is further shown that these charge dots may be rewritten and replaced by charge of the opposite sign through the application of an opposite charging bias. A simple analysis is presented to quantify the total amount of charge stored in each charge dot. The time evolution of these charge dots is studied, and charge decay time constants are extracted. Finally, a study is presented of various writing parameters such as tip bias, tip to sample separation, and write time on the size and total stored charge of the resultant charge dots.Samples were produced from commercially available 3 in. Si͑111͒ wafers, n-type with 3.0-4.3 ⍀ cm resistivity. After being subjected to a standard acetone, isopropyl alcohol, deionized water degrease in ultrasound, the wafer was etched in 50:1 HF solution until hydrophobic, rinsed in deionized water, and immediately introduced into vacuum. Electron beam evaporation was used to deposit material from an undoped Si charge and a 99.99% CeO 2 charge to grow the structures. Initially, a 200 Å Si buffer layer was grown and examined by ͑RHEED͒ reflection high-energy electron diffraction to assure the characteristic (7ϫ7) reconstruction was appar...

Journal of The Americanlining are exposed to temperatures and atmospheres sufficient to cause formation of a dense layer during the latter portion of the blow and during turndown for sampling and tapping. Either dissolution of a previously formed layer or of MgO condensed from the vapor phase into the unsaturated liquid slag would account for the apparent lack of a dense layer in the reaction zone of brick removed from the BOF. However, the point to bear in mind is the overall similarity in microstructural features of laboratory and service specimens.A review of all information on the relative wear rates of burned impregnated and pitch-bonded brick indicates that the most significant difference that would account for the higher wear rate of the pitch-bonded brick in high-wear areas is the very porous weak zone at the refractory-slag interface. This zone results from internal oxidation-reduction reactions and occurs independent of formation of a dense layer. If the dense layer forms. it bridges coarse particles; the strength of the interface depends on the degree to which the coarse particles are anchored in the carbon-bonded matrix.When the dense layer can form, its retention in service for burned and pitch-bonded brick is contingent on MgO saturation of the slag. In this respect, process parameters of the operation should avoid large volumes of low-lime/silica slags. VII. SummaryThe laboratory data and theoretical analysis of the present study show that internal oxidation-reduction reactions will occur in all types of carbon-bearing BOF refractories under steelmaking conditions. The rate of these reactions increases with increasing temperature and decreases with increasing pMg and/or pC0 at constant temperature. Above 2700°F in an oxidizing atmosphere, a dense MgO layer forms and slows the rate of internal reactions. Subsequent reaction appears to be limited by diffusion across the dense layer. This layer dissolves quickly in low-lime/silica slags undersaturated with Ceramic Society-Bell et al. Vol. 55, No. 1 MgO but is quite impervious to high-lime/silica slags easily saturated with MgO. Porosity and low-lime/silica material accumulate in the decarburized region behind the hot face independent of formation of a dense layer. The alteration in the distribution of porosity and impurities must result in a decrease in high-temperature strength of the affected area adjacent the hot face. This phenomenon would account for the faster rate of wear of pitch-bonded brick in high-wear areas of the BOF. , "Carbon-ME0 Reactions in BOF Refractories," Amer. Ceram. SOC. Bull., 50 [7] B. Brezny and R. A. Landy, "Effects of Heat and Silicate