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This section presents a historical review of the technology revolution, from the invention of the first integrated circuit (IC) to today's very large scale integration (VLSI) technology.This section reviews the development of the manufacturing technology of present day microelectronics, based on the "planar process." It describes silicon crystal technology, crystal dopant techniques, silicon oxidation development, lithography, materials deposition processes, pattern transfer mechanisms, metal interconnect technology, and material passivation technology.

We have found that nitrogen incorporation in the gate-oxide, by implantation into the Si, degrades the low field inversion mobility. Although submicron transistors fabricated using nitrogen implantation have been reported to show higher drive currents compared with "pure" oxides, we have measured about 20% degradation in large area transistors for a 2e14 cm 2 nitrogen implant. These measurements were done using nMOS transistors with thin gate-oxides ( 4 nm). Thickness determination was done by simulation fit to capacitance-voltage (C-V) measurements by including quantization and tunneling effects. We furthermore, observed that the decrease in the mobility has an increased sensitivity to the channel doping concentration.

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A number of groups have reported that the stress-induced leakage current (SILC) follows a power law dependence on the stress time. In this study, we observed that the power-law behavior is only an approximation of the fast rising part of a more complex behavior. SILC rises during initial stress stage and saturates after long stress time. Based on the trap-assisted tunneling (TAT) model, we show that the stress time dependence of SILC is better described as the depletion of multi-precursors of traps. Although the new model involves many fitting parameters, we show that the fitting results are consistent with the physical interpretation of these parameters. To further support the physical interpretation, we examined these parameters with annealing experiments.