Secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), and measurements of forward current-voltage characteristics at various temperatures were used to study metallurgical reactions in WSix/GaAs formed by sputter deposition. Both SIMS and RBS showed that annealing at 800 °C results in migration of W and Si into GaAs when the atomic ratio x deviates from 0.5. On the other hand, the forward current-voltage characteristics of WSix/GaAs diodes at various temperatures showed that the excess current across the interface induced after annealing is large when x deviates substantially from 0.5, in agreement with the SIMS and RBS results. It is suggested that the migration of W and Si is directly involved in the thermal degradation of the structural and electrical properties of the WSix/GaAs interface and its x dependence.
A new processing method is proposed for fabricating indium antimonide thin film Hall elements on ferrite substrates applicable to high singal-to-noise ratio Hall effect magnetic heads.
The procedures include (1) coating the substrate with a thin glass layer containing 12 mol% alumina, then evaporating InSb film on it, (2) microzone-recrystallization of the film in a helium atmosphere containing ∼300 ppm oxygen, and (3) lapping the film to obtain a desired thickness (2 µm) and smooth surface.
The film thus formed, having the grain size of ∼3 mm×0.5 mm and dislocation density of ∼107 cm-2, shows electron mobility of 60,000 cm2/Vs, Hall coefficient of 350 cm3/C at 300 K (comparable to those of the purest single crystal) and remarkably low current noise in the audio frequency range.
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