The ion-sensitive field-effect transistor (ISFET) is a new type of miniaturised semiconductor chemical sensor. It is based on the structure of the metal-insulator-semi-conductor field-effect transistor (MISFET) in which a metal gate is replaced by an ion selective membrane, an electrolyte and a reference electrode. In this paper, an ISFET is fabricated with silicon dioxide as a gate for a pH selective membrane. The measurement of pH sensitivity, selectivity and long-term characteristics of this device have been made. A pH sensitivity can be reached of 40 mV per pH. The oxide gate ISFET device has a significant response to K+ and Na+ ions even at the low concentration of 0.01 mol 1-1. The response to K+ ion is much higher than Na+ ion. The long-term stability of the silicon dioxide gate ISFET is also studied. The long-term drift is about 1 mV per hour after a ten hour immersion.
The Kelvin generator is an amazing electrostatic device which poses many questions. Here we report the results of our investigations of this device under various controlled conditions with both non-polar and polar liquids and a sodium chloride aqueous solution. Further we have found that the generator works well even if the two liquid streams originate from different electrically insulated reservoirs. In addition we propose a model in which the electric charge results from the separation of the hydrogen and hydroxyl ions as the water droplets form.
We have examined the effect of simultaneously sputtered Teflon on the properties of sputtered silicon dioxide films. C-V measurements show that positive ions in sputtered silicon dioxide can be compensated. It also shows that the compensation effect can be controlled by the negative voltage of bias sputtering during deposition.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74
ABSTRACTThe island growth of anodic oxides on InP has been studied with transmission electron microscopy. The islands appear smooth for all growth conditions tested in contrast to the rough edge anodic oxide islands of GaAs. Changing the pH, electrolyte, or illumination did not significantly change the island shape. The islands were often observed to form in closely spaced rows indicating a heterogeneous nucleation. Coalescence appeared to be caused by a rapid growth in the regions between the touching islands. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 134.129.182.74 Downloaded on 2015-06-04 to IP
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.