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When utilizing metal amide compounds as ALD precursors, a number of chemical properties must be considered. Two of these properties are chemical compatibility and vapor phase thermal stability. The former relates to utilizing precursors together to form ternary films (e.g., hafnium silicates, hafnium titanates) where premature side reactions may cause inconsistent delivery or growth rate. The latter must be understood to prevent deviation from self-limiting processes resulting from unwanted thermal decomposition. The importance of both of these factors makes proper precursor selection essential for a successful ALD process, and therefore provides the impetus for the studies herein.

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