Effects of gallium doping on properties of a -plane ZnO films on r -plane sapphire substrates by plasma-assisted molecular beam epitaxyTo study the effects of plasma chemistries on etch characteristics and plasma-induced damage to the optical properties, dry etching of ZnO films has been carried out using inductively coupled plasmas of Cl 2 /Ar, Cl 2 /H 2 /Ar, and CH 4 /H 2 /Ar. The CH 4 /H 2 /Ar chemistry showed a faster etch rate and a better surface morphology than the Cl 2 -based chemistries. Etched samples in all chemistries showed a substantial decrease in the PL intensity of band-edge luminescence mainly due to the plasma-induced damage. The CH 4 /H 2 /Ar chemistry showed the least degradation of the optical properties.
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