The purpose of this work is to demonstrate highly uniform InGaAlP and InGaP films by low pressure MOVPE in a vertical, high speed rotating disk reactor. The three most important areas of uniformity investigated were thickness, doping, and wavelength. Highly uniform films were obtained both on a single, 50 mm diameter, wafer at the center of a 5 inch diameter wafer carrier and on three, 50 mm diameter, GaAs wafers symmetrically placed on a 5 inch diameter carrier. The effects of temperature and V/III ratio on morphology and composition were studied. Initial results on InGaAIP/lnGaP DH lasers will be presented. IntroductionlnGaAlP/lnGaP devices have considerable potential for commercial optoelectronic applications[l-31. As the demands for these devices grow, the need for larger throughput growth techniques becomes important. However, large-scale production using MOCVD has been limited due to the non-reproducibility of the thickness, wavelength, and doping uniformity. Under a given set of operating conditions, where growth is mass transport limited, recirculating flows can produce thickness and compositional variations across the wafer and limit the sharpness of the heterostructure composition profiles [4]. These random fluctuations impede their use for complex heterostructure devices. The purpose of this paper is to investigate low pressure MOVPE growth conditions and demonstrate highly uniform growth of InGaP/GaAs heterostructures on single wafer and multi-wafer runs.
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