We present a detailed analysis of the electrical and optical properties of amorphous transparent conducting thin films of indium oxide prepared by ion beam sputtering with a wide range of carrier concentrations. We show that the resistivity is dominated by ionised impurity scattering despite the amorphous structure of the films. The weak effect of the structural disorder is confirmed by studies of the interband absorption and is explained by a consideration of the relative length scales of the structural disorder and the Fermi wavelength.

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High precision electron probe microanalysis (EPMA) has been used to measure the correlation of oxygen deficiency with carrier concentration in thin films of amorphous indium oxide. This has shown that there are ten times as many oxygen vacancies as would be expected from the carrier concentration measurements, giving a doping efficiency of 0.1. It is therefore clear that the doping mechanism is more complex than the usual picture of every oxygen vacancy producing two free electrons

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