A study has been made of the dependences of the electrical resistivity and the Hall coefficient on the temperature in the range 1.8-1300 K and on magnetic fields of up to 28 kOe for the biomorphic SiC/Si (MDF-SiC/Si) composite and biomorphic porous SiC (MDF-SiC) based upon artificial cellulosic precursor (MDF -medium density fiberboards). It has been shown that electric transport in MDF-SiC is effected by carriers of n-type with a high concentration of ∼1020 cm−3 and a low mobility of ∼0.4 cm2 V−1 s−1. The specific features in the conductivity of MDF-SiC are explained by quantum effects arising in disordered systems and requiring quantum corrections to conductivity. The TEM studies confirmed the presence of disordering structural features (nanocrystalline regions) in MDF-SiC. The conductivity of MDF-SiC/Si composite originates primarily from Si component in the temperature range 1.8-500 K and since ∼500 to 600 K the contribution of MDF-SiC matrix becomes dominant.
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