We analyzed the free to acceptor (e-A) photoluminescence transition on a GaAs:Ge sample using the hot carrier temperature and the Kane's DOS. This latter temperature was calculated by the spectra largest energy tail. While the lattice temperature was put in the e-A Eagles' shape equation, the fitting was poor but if the modified line was put into the equation, the fitting was better. So, the ionization impurity energy, the band gap, the Fermi level and the band tail can be measured with a better precision than the measurements traditionally made with this method, Additional information about phonons participant can be obtained. In conclusion, the hot carrier temperature and the density of states due to the impurity concentration should be used in the e-A transition photoluminescence analysis.
We analyzed the photoluminescence (PL) spectra on heavily doped GaAs:Sn samples by Kane's theory including a Lorentzian, a Gaussian and the hot carrier temperature. The band gap, the Fermi level, and the Urbach tail were the fitting parameters. Good results were obtained when the theoretical and experimental values were compared for the three parameters. The Urbach energy magnitude and the topological disorder parameter increased when the impurity concentration augment. The average phononic participation was very close with the tabulated values. New information about a shoulder in the high energy side was obtained, too.
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