Luminescence imaging is a very rapid technique for the characterisation of silicon samples. Megapixel luminescence images on silicon bricks, unprocessed wafers, partially processed wafers and fully processed cells can be captured with acquisition times of typically a few seconds or less than one second. A number of specific luminescence imaging applications have been developed over the last three years, allowing quantitative spatial information to be gained about a variety of crucial material and device parameters. This paper reviews some of the intriguing possibilities for inline monitoring in PV production at an early stage of production that result from the above mentioned short measurement times. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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The shear elastic behaviour of the granular Y I -~P T~B~~C U~O~-~ system with x=O; 0.1; 0.15; 0.2; 0.3; 0.45 (superconducting) and 0.65 (nonsuperconducting) has been studied by a mechanical resonance method. Anomalies of shear ultrasonic velocity were found at the superconducting transition temperature TJx) and at two temperatures Tl(x) and T~( x ) above T,. The lower one of these at the temperature Tl(x) is observed only in the superconducting samples. For Pr-substituted samples Tl(x) corresponds to the onset of elastic softening during cooling. The third anomaly was found at a temperature T~( x ) closer to room temperature. The dependencies of T,, T I and T2 on x werc determined. The results indicate a correlation between T,(x) and Tl(x). A possible similarity to the A-15 compounds is discussed.

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