Low-power microwave performance of an enhancement mode (E-mode) ion implanted GaAs MESFET is reported. The 0.25-pm x 100-pm E-MESFET has a threshold voltage of I):}, = 0.0 V. At 1.0 mW operation of power with a bias condition of vds = 0.5 V and Ids = 2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results characterization of an enhancement mode GaAs MESFET operating at low power levels (0.75 to 5 mw). 11. DEVICE FABRICATION AND DC CHARACTERISTICS demonstrate the GaAs E-MESFET is an excellent choice for low power personal communication applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.