A new dry cleaning technology; laser-induced shock cleaning has k e n applied to remove the submicron particles (including post-CMP (chemical-mechanical polishing) slumes from silicon wafer surfaces.The cleaning effectiveness of the new technology was evaluated quantitatively using a laser surface scanner. The results show that most of the silica panicles on the wafer surface were removed after exposure to the laser-induced shock waves. The average removal efficiency of the particles was over 99%. The results show that cleaning efficiency is strongly dependent on a gap distance between laser focus point and the wafer surface and that a suitable control of the gap is crucial for the successful removal of the particles. In addition, this new technique was also applied successfully to the removal the post-CMP slurries from a polished pattemed wafers.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.