Growth rate and effects of doping sodium in potassium dihydrogen phosphate (KDP) solution have
been studied in crystals grown by solution evaporation and slow cooling methods. The crystals were grown in a
KDP solution doped with different concentrations of sodium ions. The rates of growth along the thickness and width
of the crystals were independent of sodium incorporation into the grown crystals and dependent on temperature
reduction by a factor of 10. The concentration of sodium in the crystals (C
s) measured by ICP and the concentrations
of sodium in the KDP solution (C
l) showed C
s/C
l to be constant.
Modified triglycine sulfate (TGS) single crystals have been grown from the aqueous solution by doping with urea, yttrium sulfate, L-serine + cobalt sulfate, and L-alanine + urea in the ferroelectric phase using a temperature lowering technique. The effects of these different dopants on the growth, dielectric, pyroelectric, optical, and mechanical properties have been investigated. TGS doped with urea and L-serine + cobalt sulfate exhibited higher material figures of merit for pyroelectric infrared detecting devices compared with pure TGS crystals. The Vicker's hardness studies at room temperature, carried out on ( 001) and (010) crystallographic planes using the Leitz Weitzler microhardness tester, show increased hardness of the doped crystals.
In this paper, we report the results of capacitance-voltage measurements conducted on several metal-insulator semiconductor (MIS) capacitors in which HgCdTe surfaces are treated with various surface etching and oxidation processes. CdZnTe passivation layers were deposited on HgCdTe surfaces by thermal evaporation after the surfaces were etched with 0.5-2.0% bromine in methanol solution, or thin oxide layers (to~ -few ten A) were grown on the surfaces, in order to investigate effects of the surface treatments on the electrical properties of the surfaces, as determined from capacitance-voltage (C-V) measurements at 80K and 1 MHz. A negative flat band voltage has been observed for MIS capacitors fabricated after etching of HgCdTe surfaces with bromine in methanol solutions, which is reported to make the surface Te-rich. It is inferred that residual Te on the surface is a positive charge, Te% C-V characteristics for MIS capacitors fabricated on oxide surfaces grown by air-exposure and electrolytic process have shown large hysteresis effects, from which it is inferred that imperfect and electrically active oxide compounds and HgTe particles near the surface become slow interface states.
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