We report on the nonlinear current-voltage ͑I-V͒ behavior and giant positive magnetoresistance ͑GPMR͒ in the Au/Yttria-stabilized zirconia/Si heterostructures. The I-V curves of the heterostructures show a rectifying property and follow the Fowler-Nordheim tunneling behavior for the larger forward bias voltages. The GPMR of the samples increases with decreasing temperature and exceeds 100 000% in a magnetic field of 7 T at 20 K with a voltage of +4 V. It also shows anisotropy with magnetoresistance for the magnetic field perpendicular to the current larger than that of the parallel case. A possible mechanism was proposed to account for the results.
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