The plastic flow of bulk metallic glasses (BMGs) is characterized by intermittent bursts of avalanches, and this trend results in disastrous failures of BMGs. In the present work, a double-side-notched BMG specimen is designed, which exhibits chaotic plastic flows consisting of several catastrophic avalanches under the applied loading. The disastrous shear avalanches have, then, been delayed by forming a stable plastic-flow stage in the specimens with tailored distances between the bottoms of the notches, where the distribution of a complex stress field is acquired. Differing from the conventional compressive testing results, such a delaying process is independent of loading rate. The statistical analysis shows that in the specimens with delayed catastrophic failures, the plastic flow can evolve to a critical dynamics, making the catastrophic failure more predictable than the ones with chaotic plastic flows. The findings are of significance in understanding the plastic-flow mechanisms in BMGs and controlling the avalanches in relating solids.
A normal subgroup N of a finite group G is called an n-decomposable subgroup if N is a union of n distinct conjugacy classes of G. Each finite nonabelian nonperfect group is proved to be isomorphic to Q 12 , or Z 2 × A 4 , or G = a, b, c | a 11 = b 5 = c 2 = 1, b −1 ab = a 4 , c −1 ac = a −1 , c −1 bc = b −1 if every nontrivial normal subgroup is 2-or 4-decomposable.
Thin SiO 2 films were used to modify the Ta 2 O 5 insulator (STS) in the ZnO-TFTs fabricated at room temperature by RF magnetron sputtering. The performance of the device was obviously improved after adding thin SiO 2 layers, such as: enhancement of on/off ratio by one order of magnitude, reduction of the subthreshold swing from 0.32 to 0.28 V/dec, increase of the field effect mobility (from 46.2 to 52.4 cm 2 /V s), as well as reduction of the hysteresis in I DS versus V GS curves and capacitance-voltage characteristics. The capacitancevoltage and C À2 versus voltage characteristics were investigated, from which the trapped charge density at or near the interface between insulator and ZnO layer as well as the carriers concentration of the ZnO film are calculated. The performance enhancements are attributed to the reduce of leakage current, smoother surface morphology, and suppress of charge trapping by using SiO 2 films to modify the high-k Ta 2 O 5 dielectric.
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