Effects of scattering on two-dimensional electron gases in InGaAs/InAlAs quantum wells J. Appl. Phys. 112, 023713 (2012) High efficiency ultraviolet emission from AlxGa1−xN core-shell nanowire heterostructures grown on Si (111) by molecular beam epitaxy Appl. Phys. Lett. 101, 043115 (2012) Current transport in nonpolar a-plane InN/GaN heterostructures Schottky junction J. Appl. Phys. 112, 023706 (2012) Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells J. Appl. Phys. 112, 023108 (2012) Analysis of AlN/AlGaN/GaN metal-insulator-semiconductor structure by using capacitance-frequencytemperature mapping Hexagonal boron nitride (hBN) epilayers have been synthesized on sapphire substrates by metal-organic chemical vapor deposition (MOCVD). These MOCVD grown epilayers exhibit highly efficient band-edge photoluminescence (PL) emission lines centered at around 5.5 eV. The results represent a remarkable improvement over the optical qualities of hBN films synthesized by different methods in the past. It was observed that the emission of hBN at 10 K is about 500 times stronger than that of high quality AlN epilayers. Polarization-resolved PL spectroscopy revealed that hBN epilayers are predominantly a surface emission material, in which the band-edge emission with electric field perpendicular to the c-axis (E
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