Antiferromagnets are hard to control by external magnetic fields because of the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization. However, relativistic quantum mechanics allows for generating current-induced internal fields whose sign alternates with the periodicity of the antiferromagnetic lattice. Using these fields, which couple strongly to the antiferromagnetic order, we demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 10(6) ampere per square centimeter. Electrical writing is combined in our solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.

We study theoretically the electronic states in a 5d transition metal oxide Na2IrO3, in which both the spin-orbit interaction and the electron correlation play crucial roles. A tight-binding model analysis together with the first-principles band structure calculation predicts that this material is a layered quantum spin Hall system. Because of the electron correlation, an antiferromagnetic order first develops at the edge, and later inside the bulk at low temperatures.

The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external magnetic field, and the FM stray field is used for reading. However, the latest generation of magnetic random access memories demonstrates a new efficient approach in which magnetic fields are replaced by electrical means for reading and writing. This concept may eventually leave the sensitivity of FMs to magnetic fields as a mere weakness for retention and the FM stray fields as a mere obstacle for high-density memory integration. In this paper we report a room-temperature bistable antiferromagnetic (AFM) memory which produces negligible stray fields and is inert in strong magnetic fields. We use a resistor made of an FeRh AFM whose transition to a FM order 100 degrees above room-temperature, allows us to magnetically set different collective directions of Fe moments. Upon cooling to room-temperature, the AFM order sets in with the direction the AFM moments pre-determined by the field and moment direction in the high temperature FM state. For electrical reading, we use an antiferromagnetic analogue of the anisotropic magnetoresistance (AMR). We report microscopic theory modeling which confirms that this archetypical spintronic effect discovered more than 150 years ago in FMs, can be equally present in AFMs. Our work demonstrates the feasibility to realize room-temperature spintronic memories with AFMs which greatly expands the magnetic materials base for these devices and offers properties which are unparalleled in FMs

We present an implementation of an interface between the full-potential linearized augmented plane wave package Wien2k and the wannier90 code for the construction of maximally localized Wannier functions. The FORTRAN code and a documentation is made available and results are discussed for SrVO 3 , Sr 2 IrO 4 (including spin-orbit coupling), LaFeAsO, and FeSb 2 .

Ab initio analyses of A(2)IrO(4) (A=Sr,Ba) are presented. Effective Hubbard-type models for Ir 5d t(2g) manifolds downfolded from the global band structure are solved based on the dynamical mean-field theory. The results for A=Sr and Ba correctly reproduce paramagnetic metals undergoing continuous transitions to insulators below the Néel temperature T(N). These compounds are classified not into Mott insulators but into Slater insulators. However, the insulating gap opens by a synergy of the Néel order and significant band renormalization, which is also manifested by a 2D bad metallic behavior in the paramagnetic phase near the quantum criticality.

A material is said to exhibit dichroism if its photon absorption spectrum depends on the polarization of the incident radiation. In the case of X-ray magnetic circular dichroism (XMCD), the absorption cross-section of a ferromagnet or a paramagnet in a magnetic field changes when the helicity of a circularly polarized photon is reversed relative to the magnetization direction. Although similarities between X-ray absorption and electron energy-loss spectroscopy in a transmission electron microscope (TEM) have long been recognized, it has been assumed that extending such equivalence to circular dichroism would require the electron beam in the TEM to be spin-polarized. Recently, it was argued on theoretical grounds that this assumption is probably wrong. Here we report the direct experimental detection of magnetic circular dichroism in a TEM. We compare our measurements of electron energy-loss magnetic chiral dichroism (EMCD) with XMCD spectra obtained from the same specimen that, together with theoretical calculations, show that chiral atomic transitions in a specimen are accessible with inelastic electron scattering under particular scattering conditions. This finding could have important consequences for the study of magnetism on the nanometre and subnanometre scales, as EMCD offers the potential for such spatial resolution down to the nanometre scale while providing depth information--in contrast to X-ray methods, which are mainly surface-sensitive.

Using the fluctuation-exchange approximation, we study an effective five-band Hubbard model for ironpnictide superconductors obtained from the first-principles band structure. We preclude deformations of the Fermi surface due to electronic correlations by introducing a static potential, which mimics the effect of charge relaxation. Evaluating the Eliashberg equation for various dopings and interaction parameters, we find that superconductivity can sustain higher hole than electron doping. Analyzing the symmetry of the superconducting order parameter we observe clear differences between the hole-and electron-doped systems. We discuss the importance of the pnictogen height for superconductivity. Finally, we dissect the pairing interaction into various contributions, which allows us to clarify the relationship between the superconducting transition temperature and the proximity to the antiferromagnetic phase.

The metal-insulator transition in correlated electron systems, where electron states transform from itinerant to localized, has been one of the central themes of condensed-matter physics for more than half a century. The persistence of this question has been a consequence both of the intricacy of the fundamental issues and the growing recognition of the complexities that arise in real materials, when strong repulsive interactions play the primary role. The initial concept of Mott was based on the relative importance of kinetic hopping (measured by the bandwidth) and onsite repulsion of electrons. Real materials, however, have many further degrees of freedom that, as is recently attracting note, give rise to a rich variety of scenarios for a 'Mott transition'. Here, we report results for the classic correlated insulator MnO that reproduce a simultaneous moment collapse, volume collapse and metallization transition near the observed pressure, and identify the mechanism as collapse of the magnetic moment due to an increase of crystal-field splitting, rather than to variation in the bandwidth.