A comprehensive study of the electronic properties of monoclinic MoO 2 from both an experimental and a theoretical point of view is presented. We focus on the investigation of the Fermi body and the band structure using angle-resolved photoemission spectroscopy, de Haas-van Alphen measurements, and electronic structure calculations. For the latter, the full-potential augmented spherical wave method has been applied. Very good agreement between the experimental and theoretical results is found. In particular, all Fermi surface sheets are correctly identified by all three approaches. Previous controversies concerning additional holelike surfaces centered around the Z and B points could be resolved; these surfaces were artifacts of the atomic-sphere approximation used in the old calculations. Our results underline the importance of electronic structure calculations for the understanding of MoO 2 and the neighboring rutile-type early transition-metal dioxides. This includes the low-temperature insulating phases of VO 2 and NbO 2 , which have crystal structures very similar to that of molybdenum dioxide and display the well-known prominent metal-insulator transitions.
A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.
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