Defect Engineering and Gettering in a High-voltage Substrate TechnolgyDefect engineering in the CZ-silicon high-voltage substrate technology with a polycrystalline support needs very deep denuded zones, which enclose the whole volume of the monocrystalline islands. The formation of crystal defects is compared in the substrate fabrication process with and without an outdiffusion annealing (15 h at 1250 "C), respectively. The gettering efficiency of the polycrystalline support and of the buried layer at the island bottom has been studied. The influence of the defect density and the heavy metal contamination on the device parameters has been investigated at a high voltage p-n-p lateral transistor.Das Defectengineering an CZ-Silizium-Hochvoltsubstraten mit polykristallinem Hilfstriger erfordert tiefe defektverarmte Zonen, die das gesamte Volumen der einkristallinen Inseln umfassen. Es wird die Entstehung von Kristalldefekten im Substratherstellungsprozerj mit und ohne Vortemperung zur Sauerstoffausdiffusion (1 5 h bei 1250 "C) verglichen. Die GetterEhigkeit des polykristallinen Hilfstriigers und des begrabenen Gebietes am Inselboden, sowie der EinfluD von Defektdichte und Konzentration von Schwermetallverunreinigungen auf die Bauelementeparameter eines Hochvolt-pn-p-Lateraltransistors wurden untersucht.
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