A new trench isolation technique has been demonstrated, wbch can be used to make high voltage integrated circuits with trench isolation. The technique consists of positive etching using the HBr/SiF, with 45% in He-0, chemistries and global planarization after trench refill techmques using CMP. The novel technique provides better surface quality of 3.1 A RMS value roughness of AFM, better uniformity of CMP less than 3% and better leakage characteristics of less than 1 nA at 400V.
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