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InGaAs nanowhiskers were grown by metal-organic vapor-phase epitaxy on (111)B GaAs substrates using the vapor-liquid-solid growth mode. The diameter of nanowhiskers was defined by monodisperse gold nanoparticles deposited on the GaAs substrate from the liquid phase. By adjusting the triethylgallium to trimethylindium flow ratio, InxGa1−xAs whiskers with various compositions were realized. The composition characterization of the grown whiskers was done by high-resolution x-ray diffractometry. A detailed analysis of measured spectra allowed resolving the presence of an InGaAs three-dimensional layer between whiskers. High-resolution transmission electron microscopy investigation revealed the lattice constant of the grown whisker structures, which agrees with the whisker composition defined by x-ray diffractometry. Finally, low-temperature photoluminescence measurements of the realized InGaAs whiskers were carried out.

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