Large quantities of prism-shaped GaN nanorods were prepared by a thermal CVD reaction between Ga and
NH3 on LaAlO3 crystal substrates. The distinct morphology of the GaN nanorods lies in their prism-like out
shape and most of them have a quadrilateral cross section. The Raman spectrum of the GaN nanorods shows
two additional bands at 255 and 419 cm-1. Moreover, a large red shift of A1(LO) phonon has been observed
compared with that of bulk GaN crystals. Room-temperature photoluminescence measurement reveals a broad
emission ranging from 2.5 to 3.5 eV with some fine structures, which are believed to be associated with the
defect levels.
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