We carried out density functional theory calculations to investigate the ripening of Pd clusters on CeO2(111). Starting from stable Pdn clusters (n = 1–21), we compared how these clusters can grow through Ostwald ripening and coalescence. As Pd atoms have mobility higher than that of Pdn clusters on the CeO2(111) surface, Ostwald ripening is predicted to be the dominant sintering mechanism. Particle coalescence is possible only for clusters with less than 5 Pd atoms. These ripening mechanisms are facilitated by adsorbed CO through lowering barriers for the cluster diffusion, detachment of a Pd atom from clusters, and transformation of initial planar clusters.

First-principles calculations have been performed to explore the charge transport process over defective CeO2(111). Charge transport can proceed either by direct migration of the oxygen anion (i.e., vacancy diffusion) or by a polaron-hopping-assisted mechanism. On the basis of DFT+U calculations, we found that the latter process is significantly more favorable than the former. The overall barrier for charge transport involving polaron migration, followed by oxygen diffusion, is determined by the barrier for polaron hopping, which amounts to 0.18 eV. This computed value is in good agreement with the experimental barrier for ceria with a low defect density. We have shown by a careful analysis of the magnetization density, the density of states, and the reaction pathway trajectory that this process is phonon induced. Our results provide valuable insights into carrier drift processes over defective metal oxide surfaces.