The uncontrolled development of nanoscale roughness during plasma exposure of polymer surfaces is a major issue in the field of semiconductor processing. In this paper, we investigated the question of a possible relationship between the formation of nanoscale roughening and the simultaneous introduction of a nanometer-thick, densified surface layer that is formed on polymers due to plasma damage. Polystyrene films were exposed to an Ar discharge in an inductively coupled plasma reactor with controllable substrate bias and the properties of the modified surface layer were changed by varying the maximum Ar + ion energy. The modified layer thickness, chemical, and mechanical properties were obtained using real-time in situ ellipsometry, x-ray photoelectron spectroscopy, and modeled using molecular dynamics simulation. The surface roughness after plasma exposure was measured using atomic force microscopy, yielding the equilibrium dominant wavelength and amplitude A of surface roughness. The comparison of measured surface roughness wavelength and amplitude data with values of and A predicted from elastic buckling theory utilizing the measured properties of the densified surface layer showed excellent agreement both above and below the glass transition temperature of polystyrene. This agreement strongly supports a buckling mechanism of surface roughness formation.

Dependence of photoresist surface modifications during plasma-based pattern transfer on choice of feedgas composition: Comparison of C 4 F 8 -and C F 4 -based dischargesPlasma-polymer interactions are important for the purpose of etching, deposition, and surface modification in a wide range of different fields. An Ar discharge from an inductively coupled plasma reactor was used to determine the factors in a simple plasma that control etch and surface roughness behavior for three styrene-based and three ester-based model polymers. The authors compared the etch behavior of polymers in Ar plasma discharges with low and high energy ions by changing the substrate bias, compared cooled and elevated substrate temperature conditions, and compared fully plasma-exposed conditions and vacuum ultraviolet ͑vuv͒-only conditions by employing a magnesium fluoride window to prevent ion bombardment in the vuv-only case. It was found that ions, vuv radiation, and temperature all had significant impact on the etch behavior of polymers. The dependence of polymer structure on etch and surface roughness was also compared. Polymers with styrene and ester side groups were compared and polymers with ␣-hydrogen and with ␣-methyl were compared. It was found that for styrene-based polymers, there was a large difference in material removal between ␣-hydrogen ͓poly͑4-methylstyrene͒͑P4MS͔͒ and ␣-methyl ͓poly͑␣-methylstyrene͒ ͑P␣MS͔͒ structures. This difference was highly temperature dependent, and the ceiling temperature of the polymers was found to be the most important property to consider. Below the ceiling temperature, the amount of material removed in P4MS and P␣MS was the same, but above it there was a dramatic material loss in P␣MS not seen in P4MS. For the ester-based polymers, it was established that oxygen depletion occurred before any other mechanism and the most important factor to consider was oxygen content in the polymer. By using in situ ellipsometry, it was also found that at temperatures below the ceiling temperature modification by vuv radiation of P␣MS created a slightly denser layer at the surface with higher index of refraction. This effect was not seen in P4MS. It was observed that in general, low energy ions contributed to material removal by physical sputtering at the polymer surface and the amount of material removal increased with oxygen content in the polymer. vuv radiation caused bulk depolymerization and oxygen depletion reactions that were highly polymer structure specific and temperature dependent. High energy ion bombardment was found to create an amorphous carbonlike damage layer with a thickness that was determined by the ion penetration depth. This damage layer could be characterized by ellipsometry. While for P4MS it was sufficient to model by ellipsometry the etch process using an ion-damaged layer on top of a bulk layer of unmodified polymer, the vuv effect needed to be added to the optical model in order to accurately characterize P␣MS. Finally, surface roughening of polymers only occurred under ion bomba...

Results are presented from molecular dynamics (MD) simulations of 100eV Ar+ bombardment of a model polystyrene (PS) surface. The simulations show that the system transitions from an initially high sputter yield (SY) for the virgin polymer to a drastically lower SY as steady state is approached. This is consistent with corresponding ion beam experiments. The MD indicates that this drop in SY is due to the formation of a heavily cross-linked, dehydrogenated damaged layer. The thickness and structure of this layer are also consistent with ellipsometry and x-ray photoelectron spectroscopy measurements of Ar plasma-exposed PS samples.

Molecular dynamics (MD) simulations have been carried out to examine the effects of Ar+, Ar+/H, and Ar+/F bombardment of a model polystyrene (PS) surface. For bombardment with 100 eV Ar+ only, the simulations show the formation of a heavily cross-linked dehydrogenated damaged layer in the near-surface region after some initial fluence, consistent with plasma and beam system experimental results. The 1–2 nm thick amorphous carbon-rich modified layer has a much lower sputter yield compared to that of the virgin PS, which has a H:C ratio of 1. Simultaneous bombardment of the damaged dehydrogenated PS layer with 300 K H or F radicals and 100 eV Ar+ can facilitate the removal of the layer as well as inhibit its initial formation. The development of the steady-state dehydrogenated layer under Ar+-only bombardment results from a competition between the breaking of carbon-hydrogen bonds (which leads to dehydrogenation and subsequent cross-linking) and the breaking of carbon-carbon bonds (which leads to sputtering of polymer fragments). For the conditions presented in this study, the loss of hydrogen eventually overtakes the removal of polymer fragments, resulting in the formation of the dehydrogenated cross-linked near-surface layer. The final properties of the dehydrogenated layer from the MD simulations are compared at steady state to ellipsometric data for plasma-exposed PS samples, and the initial and final sputter yields from MD are compared to experimental beam system data.

MD simulations of ion–organic styrene‐containing polymer interactions are reviewed and compared to experiment. We report results for argon ion bombardment of PS, PαMS and P4MS. All three polymers exhibit the formation of a similar, highly cross‐linking, dehydrogenated near‐surface damaged layer at steady state, but small changes in the structure of the polymer (P4MS and PαMS are isomers) can lead to drastic changes in the initial transient sputtering of the material. We correlate this behavior to differences in radiation chemistry (P4MS and PS are cross‐linking while PaMS is a chain scission polymer), and examine how the behavior in MD may relate to larger‐scale experimental results, such as roughness formation.