GaAsNSb alloys have been demonstrated using MOCVD growth over a wide span of nitrogen composition. Dilute-nitride alloys hold potential for mid-IR emission using GaAsSbN/GaAsSb type-II QWs.Dilute-nitride InGaAsN(Sb) alloys have been extensively studied, primarily as strained QW material on GaAs substrates [1][2][3][4]. 1.5 µm-emitting InGaAsNSb QW lasers grown by MBE have exhibited threshold current densities comparable to conventional InGaAsP/InP-based devices. However, the MOCVD growth of these materials remains quite challenging because of the inhibition of N incorporation into high indium content InGaAs alloys [5]. An alternative dilute-nitride material, GaAsSbN, with N-contents in the range of 1-2% have also been reported previously on GaAs substrates [6], and can exhibit emission wavelengths >1.3 µm. More recently, we reported on the growth of GaAsSbN/GaAsSb type-II QWs on InP substrates for emission wavelengths in the mid-IR [7]. A design analysis of a strain compensated structure (tensile-strained GaAsSbN electron wells and a compressivelystrained GaAsSb hole well) indicates that emission is possible in the 2-3 µm wavelength range. The emission wavelength is limited primarily by the ability to incorporate N into the GaAsSb alloy and strain considerations. However, the growth and material properties of these dilute-nitride alloys on InP substrates have not been thoroughly studied.For visible light emission, the growth of N-rich GaNAs has been investigated to extend the emission wavelengths of GaN-based structures toward the red/infrared spectrum. When grown on GaN, GaNAs alloys have a smaller bandgap and strain compared with InGaN compounds [8][9]. N-rich GaNAs has been reported using low pressure MOCVD growth on sapphire substrates using TMGa, NH 3 , and TBAs at relatively high temperatures (700-750 o C). Single-phase material was reported although As contents were limited to <6.7%. Here we employ low temperature MOCVD growth, DMHy as the nitrogen source, and TMSb for the growth of GaNAsSb. Previously, the use of Sb was studied as a surfactant in the growth of GaNAs on sapphire [10]. However, no detectable Sb was incorporated into the films. Here we find that the addition of Sb, at low growth temperatures, allows N incorporation over the entire compositional range from dilute-nitride to nitrogen-rich alloys. Under these growth conditions, a significant concentration of Sb is incorporated into the GaNAsSb, as shown below.The GaAsSbN structures were grown by metalorganic chemical vapor deposition (MOCVD) at a growth temperature of 520 °C and reactor pressure of 100 mbar on (100) InP substrates. Trimethylgallium (TMGa) was the group III precursor material, and AsH 3 , trimethylantimony (TMSb), and U-dimethylhydrazine (U-DMHy) were the group V precursors. The solid phase material composition of GaAsSbN were determined by high-resolution x-ray diffraction (HRXRD), electron microprobe analysis (EMPA), secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), and nuclear reaction anal...
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