Low-grade type 3 gastric NET has non-aggressive features and a favourable prognosis. Wedge or endoscopic resection may be a valid option for patients with type 3 gastric G1 NET no larger than 1·5 cm without lymphovascular invasion.

In the present study 3·2 per cent of patients who were negative for all identified risk factors had lymph node metastasis. The use of endoscopic submucosal dissection should be considered carefully in the treatment of poorly differentiated early gastric cancer.

Background: This study compared the surgical outcomes of transoral endoscopic thyroidectomy vestibular approach (TOETVA) and transoral robotic thyroidectomy (TORT) in papillary thyroid cancer (PTC). Methods: The TOETVA and TORT groups comprised 119 and 121 patients between November 2016 and May 2022. Clinico-surgical outcomes and operation times were retrospectively reviewed. Results: The TORT group showed a higher number of retrieved central compartment lymph nodes, shorter hospital stays, and lower pain score after 48 h than the TOETVA group. No significant difference was observed in the other postoperative complications, including permanent vocal cord palsy. Total operation, working space creation, and endoscopic or robotic surgery times of the TORT group were longer than those of the TOETVA group.Conclusions: TORT and TOETVA are feasible and safe. TORT may have some advantages, such as central compartment node dissection, shorter hospital stays, and pain score after 48 h in PTC, despite a longer operative time.

SiO 2 -like thin films were deposited at low temperatures ͑Ͻ50°C͒ by atmospheric-pressure plasma-enhanced chemical vapor deposition using a pin-to-plate-type dielectric barrier discharge with a gas mixture containing hexamethyldisilazane ͑HMDS͒/Ar/O 2 . The deposition rate increased with increasing concentration of HMDS in the gas mixture. However, a powdery film with Si-OH bonding, high roughness, and low transmittance was obtained, which was attributed to the enhanced homogeneous reaction with increasing HMDS. The increase in O 2 flow rate at a fixed HMDS flow rate increased the reaction rate of the remaining HMDS on the substrate surface, which resulted in an increase in deposition rate until the remaining HMDS had completely reacted. An increase in the oxygen flow rate also increased the surface roughness and decreased the optical transmittance slightly, possibly due to the formation of small SiO 2 particles in the gas phase during the dissociation of the gas mixture under high-oxygen-percentage conditions. At the optimum condition of HMDS ͑15 sccm͒/O 2 ͑300 sccm͒/Ar ͑2 slm͒, smooth SiO 2 -like thin films with a transmittance Ͼ95% could be obtained with a deposition rate of approximately 21 nm/min.

A screen-printed carbon nanotube ͑CNT͒ paste for applications to field emission emitters was treated with He, He/ Ar, and He/ N 2 atmospheric pressure plasmas. The effect of the different plasma treatments on the field emission characteristics of the screen-printed CNTs was investigated. The atmospheric pressure plasma applied to the screen-printed CNT paste for 10 s resulted in a reduction in the turn-on electric field. In particular, the application of a He/ N 2 plasma treatment decreased the turn-on electric field from 3.13 to 1.29 V / m and increased the field enhancement factor from 737 to 2775 after the treatment. These results suggest that an adequate atmospheric pressure plasma treatment of screen-printed CNTs can be effective in enhancing the field emission properties.

Silicon oxide thin films were deposited using a modified, pin-to-plate, dielectric barrier discharge system with polydimethylsiloxane ͑PDMS͒, bubbled by He/O 2 gas mixtures at atmospheric pressure and a temperature of less than 50°C. Increasing PDMS flow rate in the gas mixture increased the deposition rate, but also increased the surface roughness due to the formation of particles in the gas phase as a result of increased PDMS and silanol groups, leading to incomplete decomposition or oxidation of PDMS. The increase in the ratio of oxygen flow rate to PDMS flow rate decreased the surface roughness with increasing deposition rate due to the efficient oxidation of PDMS. However, when the oxygen flow rate was raised above 1 slm, due to the increased oxidation of PDMS in the gas phase and the decreased PDMS dissociation by the decreased plasma density, the surface roughness was again increased with decreasing deposition rate. At the gas mixture of 9 slm PDMS/He and 1 slm oxygen, a smooth, SiO 2 -like thin film was obtained at a deposition rate of 12 nm/min.

Abstract— We have developed the world's largest TFT‐LCD, which has a 55‐in.‐diagonal size. This LCD features a 1920 × 1080 (16:9) resolution for full‐HDTV images, 500‐nit luminance, 72% color gamut, and 12‐msec response time at all gray levels. The size of the panel (55 in.) was determined by the maximum efficiency of our fifth‐generation line (glass size: 1100 × 1250 mm). To overcome the limitation of size in photolithography equipment, a new stitcking‐free technology was applied in both the TFT and color‐filter side. And the super‐IPS mode was used as a wide‐viewing‐angle technology because it is suitable in the fabrication of large panels. In this paper, we present issues on both the fabrication and characteristics of the 55‐in. TFT‐LCD.

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