A new method is described for measuring the critical current density and transition temperature of a superconducting film without making contact to it or modifying it in any way. This technique is particularly well suited for use with high transition temperature oxide films which are notoriously irreproducible and sensitive to patterning. It consists of positioning a flat, multiturn coil near the film surface and driving the coil with an audio frequency sine-wave current. Induced shielding currents flow in the film. We have calculated the radial dependence of the induced currents and show that the induced current density is zero at the coil center, rises to a maximum near the mean radius of the drive coil, and then falls off rapidly as the radius continues to increase. A measurement of the critical current per length can be obtained by monitoring the development of odd harmonic voltage components across the coil as the drive current is increased. We find that this measure of nonlinearity in the coil–film system increases abruptly when the maximum induced current equals the critical current. The critical current obtained by this inductive measurement has been demonstrated to give nearly the same value as that obtained by a transport measurement. Other advantages to this inductive measurement approach include: sensitivity only to intergranular critical current, and an ability to accommodate large substrates. Finally, with only minor modification to the electronics used to measure Jc, the superconducting transition temperature of the sample may be measured as well.

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A finite stack of thin superconducting tapes, all carrying a fixed current I, can be approximated by an anisotropic superconducting bar with critical current density J c = I c /2aD, where I c is the critical current of each tape, 2a is the tape width, and D is the tape-to-tape periodicity. The current density J must obey the constraint Jdx = I/D, where the tapes lie parallel to the x axis and are stacked along the z axis. We suppose that J c is independent of field (Bean approximation) and look for a solution to the critical state for arbitrary height 2b of the stack. For c < |x| < a we have J = J c , and for |x| < c the critical state requires that B z = 0. We show that this implies ∂J/∂x = 0 in the central region. Setting c as a constant (independent of z) results in field profiles remarkably close to the desired one (B z = 0 for |x| < c) as long as the aspect ratio b/a is not too small. We evaluate various criteria for choosing c, and we show that the calculated hysteretic losses depend only weakly on how c is chosen. We argue that for small D/a the anisotropic homogeneous-medium approximation gives a reasonably accurate estimate of the ac losses in a finite Z stack. The results for a Z stack can be used to calculate the transport losses in a pancake coil wound with superconducting tape.

Using a novel growth technique called reactive bias target ion beam deposition, the authors have prepared highly oriented VO2 thin films on Al2O3 (0001) substrates at various growth temperatures ranging from 250to550°C. The influence of the growth parameters on the microstructure and transport properties of VO2 thin films was systematically investigated. A change in electrical conductivity of 103 was measured at 341K associated with the well known metal-insulator transition (MIT). It was observed that the MIT temperature can be tuned to higher temperatures by mixing VO2 and other vanadium oxide phases. In addition, a current/electric-field induced MIT was observed at room temperature with a drop in electrical conductivity by a factor of 8. The current densities required to induce the MIT in VO2 are about 3×104A∕cm2. The switching time of the MIT, as measured by voltage pulsed measurements, was determined to be no more than 10ns.

The magnetic, structural, and transport properties of the Heusler alloy Co2MnSi are reported for sputtered thin films and a single crystal. X-ray diffraction reveals a phase pure L21 structure for all films grown between 573 and 773 K. Films grown at 773 K display a four-fold decrease in the resistivity relative to those grown at lower temperatures and a corresponding 30% increase in the residual resistivity ratio (ρ300 K/ρ5 K). We show that the higher growth temperature results in lattice constants, room temperature resistivities, and magnetic properties that are comparable to that of the bulk single crystal.