CuIn(1−x)GaxSe2 (CIGS) thin films with Ga ratio, x, ranging from 0.55 to 0.75 were grown on Mo/glass substrates by the selenization of metallic precursors in a H2Se atmosphere. Without a postdeposition annealing step the films were found to have a highly graded composition that became Ga rich near the absorber/Mo interface. A high-temperature annealing step promoted diffusion of Ga to the surface region of the films. These absorbers were used to fabricate glass/Mo/CIGS/CdS/ZnO thin-film solar cells with open-circuit voltages ranging from 0.4 to 0.74 V and efficiencies approaching 12%. Devices, as well as the absorber layers, were characterized.

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