The low pressure chemical vapor deposition of in situ phosphorus-doped polysilicon films from Sill4 and PH3 was investigated in a production-type hot wall horizontal tube reactor as a function of PHJSiH4 mole ratio and deposition temperature. With increasing PH3 partial pressure, a reduction in growth rate is observed because the dissociative chemisorption of Sill4 is inhibited. The reaction proceeds via homogeneous gas phase reactions which explains that, in our case where we operate at a relatively high pressure of about 1 torr, the reduction in growth rate is limited to a factor of 2 (87-45 A/min). By using caged cassettes and an injector, the uniformities were better than _+5% for a load of 100 wafers with a diameter of 125 mm, maintaining a flat temperature profile, within 0.5~ over the boat. The grain size and crystalline structure were studied with transmission electron microscopy. Films deposited at 580~ appeared to have the largest grain size and a perfectly smooth surface. Correspondingly, the resistivity of saturated doped films revealed a minimum value just above 500 ~cm for a deposition temperature of 580~ A linear relation between resistivity and inverse grain size was established. This relationship can be explained by a model that takes into account the resistance of grain boundaries.The low pressure chemical vapor deposition method is widely used in integrated circuit manufacturing for the deposition of polycrystalline silicon films (1-14). Some applications of the polysilicon films in integrated circuits are: gate electrode for MOS devices, interconnection conductor, resistor, and emitter contact. Other applications include photovoltaic conversion, thermal and mechanical sensors, and large-area LCDs. The deposition temperature appears to be an essential parameter with respect to film structure and morphology. A deposition temperature from 610 ~ to 630~ has been widely used in the industry. For lower temperatures, the as-deposited films are amorphous. Interestingly, it was found that films deposited in the amorphous state and annealed afterward showed an improved film structure (larger grains) and decreased surface roughness as compared to films deposited at higher temperatures (10-14).In order to obtain a conductive film, dopant atoms like phosphorus, boron, or arsenic need to be incorporated in the film. Originally, the dopant was introduced into the film after deposition by diffusion. Diffusion is still popular because it is a cost-effective method. However, diffusion has the disadvantages that several process steps at high temperatures with long process times are required, resulting in a high thermal load of the wafers. More recently, ion implantation as a doping method allowed very accurate dose control and profile definition at low process temperatures. However, ion implantation is an expensive approach and the dopant atoms do not reach the inside corner of polysilicon deposited over a sharp step as used in interconnections for VLSI applications (11).Lately, the possibility of introducing th...