A family of rf-ion sources for material processing RIM with ionizer diameters between 4 and 15 cm have been developed. Contrary to dc-ion sources, no filaments are needed in rf-discharges. By that, rf-ion sources are excellently suited to operate with reactive (and nonreactive) gases. The performance data of RIM sources for Ar, O2, and N2 are presented. The ion energies can be varied between 25 eV and 2.5 keV. The loss powers (by dissociation, eddy currents, radiation, etc.) have been determined. Probe measurements in the ion beam show the dependency of the beam divergence on the ion energy. Furthermore, ion beam effects (like charge exchange, beam neutralization by admission of electrons at ion energies <500 eV, etc.) were investigated.
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