The binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, harmonic oscillator-like and rectangular well-like potentials are calculated as a function of dot radius using a variational procedure within the effective mass approximation. The calculations of the binding energy of the donor impurity as a function of the system geometry have been investigated. A comparison of the eigenstates of a hydrogenic impurity in all the confinements of dots is discussed in detail. We have computed and compared the susceptibility for a hydrogenic donor in a spherical confinement, harmonic oscillator-like and rectangular well-like potentials for a finite QD and observe a strong influence of the shape of confining potential and geometry of the dot on the susceptibility.
Within the framework of a single band effective mass approximation, the binding energy of an acceptor in a diluted magnetic semiconductor of a quantum well of GaAs/Ga 1−x Mn x As/GaAs is calculated. Calculations have been performed for light holes and heavy holes states. The spin polarization which is the free carrier two dimensional sheet concentrations is calculated for the valence band holes. Spin polaronic effect is estimated using a mean field theory with the Brillouin function. We present a theoretical study of diluted magnetic semiconductors treating the local p-d exchange interaction J between the itinerant carriers and the Mn electrons within a realistic band structure. The results show that (i) spin polaronic effect raises the binding energy and this feature predominantly occurs only for narrow wells, (ii) the variation of increase in binding energy is higher for smaller wells due to the confinement and it increases with the concentration of Mn ions and (iii) the sharp variation of sheet concentration has been observed for smaller well widths. These results are discussed with the available data in the literature.
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