The damage tracks of high energy ions in dielectric materials can be etched until overlapping conical etch pits are obtained. If the depth of the pits is >lambda/2, an effective graded-index layer with very low reflectivity is obtained. Broadband antireflection treatment achieving reflectivities of <10(-4) has been applied to plastics like Lexan and Mylar.
The mechanism of the interaction of polycrystalline Ag-AI thin-film couples to form Ag 2 Al at temperatures from 107 to 221°C has been studied. Techniques of film characterization included Rutherford backscattering, x-ray diffraction, and SEM. The dependence of the interaction on the grain size of the Ag film (660-7500 A) was measured. An effective activation energy of 0.86+0.05 eV was found. The reaction is believed to occur initially by nucleation and growth of Ag 2 Al grains at Ag grain boundaries at the interface; after formation of a continuous Ag2Al layer, the growth of this layer follows a t 1/2 law, controlled by diffusion through the grain boundaries of the Ag 2 Al layer.
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