Abstracf -A fully integrated, single-chip power amplifier has been designed to meet the requirements of W-CDMA mobile handsets. The circuit was designed in IBM's 47 GHz fi. SiGe BiCMOS process with all passive components and matching circuits included on-chip. The design achieves 24 dBm output power with 30% PAE and excellent Linearity. The power amplifier draws 42 mA of quiescent current from a 3.3 V source. The fabricated circuit occupies a die ares of 1.8 mm x 1.25 mm, offering at least lox improvement in chipboard area over current designs, allowing for increased levels of transmitter integration.
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