Magneto-resistive anisotropy (AMR) has been studied in 45 nm thick La0.7−xPrxCa0.3MnO3 (LPCMO) manganite films (with Pr doping x between 0 and 0.40) deposited on LaAlO3 (LAO) and SrTiO3 (STO) substrates. The AMR in compressively strained films undergoes a sign change from positive to negative at low temperatures, whereas its sign does not change in films subjected to tensile strain. Temperature dependence of magnetization in a magnetic field applied parallel and perpendicular to the (100)-plane of the films shows that at low temperatures strain-induced rotation of the easy-axis magnetization determines the sign of the AMR. At higher temperatures near the TMI the sign of the AMR is the same in both LPCMO/LAO and LPCMO/STO films, suggesting the dominating influence of percolative transport in the plane of these films at these temperatures.
Direct bonding of PECVD SiOx films is of great interest in the field of microtechnologies for applications such as stacked structures, thin film transfers, whose fabrication processes still deserve to be investigated.This work deals with the influence of water diffusion in the SiOx films deposited onto 200mm Si wafers and its impact on adherence of hydrophilic surfaces. The as-deposited film nature induces various stresses. Stresses evolutions and water penetration are characterized and a correlation is made between the kinetics of both stress variations and water diffusion through the oxide thin films. Impacts of room temperature (RT) storage prior to bonding and thermal treatments applied for strengthening the bonding is shown.As direct bonding operates through surface asperities deformation, specific mechanical properties of such contact asperities can lead to a stronger bonding by increasing bonding area (Fournel 2015, Rieutord 2006Ventosa 2008;Ventosa 2009). As the mechanical properties of silicon oxide material are greatly influenced by internal water concentration, aging and water diffusion on asperity have a real impact in term of direct bonding energy. Moreover at bonding interfaces, it is observed by X-ray reflectivity (XRR) that aging of deposited SiOx prior to bonding enables shallower bonding gaps, indicating better bonding interface closure which is coherent with the bonding energy enhancement.All these results confirm the link between water diffusion and hydrophilic surface adherence of deposited SiOx films.
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