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The paper concerns the problem of modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal model of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.

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This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification of the model causing the improvement of its accuracy is proposed. The diode IDT06S60C is chosen for investigation. Index Terms -SiC MPS diodes, SPICE, modelingIn this model three essential blocks: the electrical model of the Schottky diode (XSDP), the electrical model of the p-i-n diode (XPND), the model of terminals (MW) and the device

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SUMMARYThe paper concerns the problem of SPICE modeling of the merged pin Schottky (MPS) diodes. In the paper, the SPICE electrothermal model (ETM) of the SiC MPS diodes proposed by Infineon Technologies is investigated. The model was verified experimentally by comparing the calculated and the measured d.c. characteristics of the diode IDT06S60C. Some modifications of the model resulting in the improvement of its accuracy at d.c. analysis are proposed.

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