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The role and effect of the isoelectronic center Sb on the structure and properties of GaN epilayers have been investigated. The gas phase Sb concentration was varied by changing the triethyl antimony/trimethyl gallium mole ratio over a wide range of concentrations while keeping other growth parameters constant. The Sb addition slightly improved the optical and structural properties of GaN epilayer at a low level of Sb incorporation, especially for the films grown under a high group V/III ratio conditions. The addition of Sb resulted in changes in GaN surface morphology, which was further explored by the lateral epitaxy overgrowth ͑LEO͒ technique through the changes in the growth rates and the facet formation. The presence of Sb in the gas phase greatly enhanced the lateral overgrowth rate and altered the formation of the dominant facets. Vertical facets to the LEO growth appeared with the addition of Sb under conditions that normally produced sloped sidewalls. While Sb altered the growth facet present during LEO, only a small amount of Sb was incorporated into the GaN, suggesting that Sb acts as a surfactant during the GaN metal organic vapor phase epitaxy growth. Sb addition produces surface conditions characteristic of a Ga-rich surface stoichiometry indicating both a possible change in the reactivity of NH 3 and/or enhanced surface diffusion of Ga adatom species in the presence of Sb.

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