Theoretical and experimental studies of the Ag(x)Ga(x)Ge(1-x)Se2 (x = 0.333, 0.250, 0.200, 0.167) single crystals are performed. These crystals possess a lot of intrinsic defects which are responsible for their optoelectronic features. The theoretical investigations were performed by means of DFT calculations using different exchange-correlation potentials. The experimental studies were carried out using the modulated VUV ellipsometry for dielectric constants and birefringence studies. The comparison of the structure obtained from X-ray with the theoretically optimized structure is presented. The crucial role of the intrinsic defect states is manifested in the choice of the exchange correlation potential used. The data may be applicable for a large number of the ternary chalcogenides which are sensitive to the presence of the local disordered states near the band edges.
The single-crystal borate LiBaB9O15 was synthesized by a high-temperature solution reaction and structurally determined by the single-crystal X-ray diffraction technique. It crystallizes in the noncentrosymmetric space group R3c and features a three-dimensional ∞3[B9O15]3– anionic framework, with infinite channels in which the Li+ and Ba2+ cations are located. The linear optical properties were investigated experimentally in terms of the absorption spectrum, which reveals an optical gap of 5.17 eV. In addition we have calculated the linear optical properties using state-of-the-art all-electron full potential linearized augmented plane wave method. The nonlinear optical susceptibilities, namely, the second harmonic generation and the hyperpolarizability of the single-crystal borate LiBaB9O15 are calculated and evaluated at a static limit and at λ = 1064 nm. The calculation shows there exists three second-order nonlinear optical susceptiblities tensors components. We present measurements of the IR spectra in the range 500–2000 cm–1, and the second harmonic generation was performed using a Quantel 15 ns Nd:YAG laser operating at 1064 nm.
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