Nonintentionally doped metalorganic vapor-phase epitaxy Ga1−x InxP layers, having an alloy composition (x = 0.49) corresponding to a lattice matched to GaAs, grown by metalorganic chemical vapor deposition, have been studied by capacitance-voltage and deep- level transient spectroscopy techniques. They are found to exhibit a free-carrier concentration at room temperature of the order of 1015 cm−3. Two electron traps have been detected. The first one, at 75 meV below the conduction band, is in small concentration (∼ 1013 cm−3) while the other, at about 0.9 eV and emitting electrons above room temperature, has a concentration in the range 1014 –1015 cm−3.
We have characterized by capacitance-voltage and deep level transient spectroscopy measurements the only defect detected in Si-doped GaInP layers. This defect exhibits an ionization energy of 0.435 eV but is located only at ∼20 meV below the bottom of the conduction band. All its characteristics, i.e., energy level, apparent capture barrier, ionization energy, can be understood if the defect is a donor associated DX center. Its cross section for electron and hole capture have been measured. The effect of an electric field on the ionization energy confirms that the defect is indeed shallow and a donor.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.