No abstract

No abstract

No abstract

No abstract

No abstract

No abstract

Articles you may be interested inPhosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metaloxide-semiconductor field effect transistor investigated by atom probe tomographyThe nanosize effect on Ge diffusion ͑850Յ T Յ 1000°C͒ in polycrystalline Si layers is investigated. The Ge diffusion coefficients in microcrystalline and nanocrystalline Si layers made of 30 m and 40 nm wide grains, respectively, are measured and compared. In the microcrystalline Si layer, the Ge diffusion coefficient in micrograin boundaries is measured using a conventional analytical solution of Fick's equations corresponding to the Fisher model. In the nanocrystalline Si layer, the Ge diffusion coefficients in nanograins and in nanograin boundaries are measured via a method based on two-dimensional simulations using the Fisher model geometry. The diffusivities in nanograins and nanograin boundaries are one order of magnitude higher than in micrograins and micrograin boundaries, respectively. However, the nanosize effect appears to be different in grains and grain boundaries; despite that the activation energy for diffusion in 40 nm wide grains is at least 1 eV lower than in Si bulk. The activation energy in nanograin boundaries is about the same as in micrograin boundaries.

No abstract