Articles you may be interested inStrong excitation intensity dependence of the photoluminescence line shape in GaAs1−xBix single quantum well samples J. Appl. Phys. 113, 144308 (2013) The nonradiative lifetime and spontaneous emission quantum efficiency in molecular-beam epitaxy grown bulk GaAs is determined using injection level dependent photoluminescence ͑PL͒ measurements. These measurements were performed at temperatures of 300, 230, 100, and 50 K using a HeNe pump laser with powers ranging from 0.3 to 40 mW. The quantum efficiency and lifetime is inferred from the power law relation linking pump power and integrated PL signal that is predicted by the rate equations. The nonradiative lifetime for bulk GaAs is determined to be 0.3 s, with an additional temperature dependent component attributed to the AlGaAs barriers that rapidly reduces the nonradiative lifetime at temperatures above 230 K. The peak quantum efficiency is Ͼ0.96 at 300 K and Ͼ0.99 at temperatures below 230 K.
The Sb-mediated growth of Al0.65Ga0.35As is studied for Sb/III flux ratios from 0 to 2% and growth temperatures from 580 to 720 °C. The electrical properties and surface morphology are found to depend strongly on both the growth temperature and the Sb flux. As an isoelectronic dopant, Sb improves the conductivity of n-Al0.65Ga0.35As with the highest conductivities occurring at the highest growth temperatures. As a surfactant, Sb improves the surface morphology at all growth temperatures, with the most dramatic improvement occurring at 670 °C. The smoothest surface (0.2 nm rms roughness) was obtained at 700 °C using a Sb/III flux ratio of 0.02. Furthermore, we have demonstrated that the use of Sb during the molecular-beam-epitaxy growth of AlGaAs effectively eliminates the “forbidden temperature gap.”
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