The reactions between (100) GaAs and Au, Zn, and Au(Zn) ohmic contact metallization have been investigated by the use of transmission electron microscopy and x-ray diffraction. Emphasis is placed on the particular role of Zn during consecutive stages of the formation of an ohmic contact to p-GaAs. The most significant feature of the interaction of Zn with GaAs is the penetration of Zn atoms into the native oxide, which remains at the surface of GaAs after chemical treatment. Moreover, the presence of Zn in Au-based metallization is found to considerably suppress the thermally induced growth of metallization grains, making the microstructure of the contact virtually intact upon annealing at temperatures up to 460°C.
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