A high-temperature lateral power MOS field-effect transistor on siliconon-insulator (SOI) material has been demonstrated to operate up to at least 3000C.resistances. This design has only one level of metal (1.5-pm thick AVl%Si), using TiW as a barrier between the silicide and aluminum. The whole FET is passivated This device is targeted initially for hightemperature applications such as engine control and down-hole oil exploration. This power device is easily integrable in our standard digital process flow, enabling high temperature, mixed-signal technology. Prototype solenoid drivers and torque motor drivers have been demonstrated using this technology. TECHNOLOGYThe power device is fabricated using the AUiedSignal 1.25-micron SO1 CMOS process [l]. The starting material (Unibond) is manufactured by SOITEC. The silicon thickness is 0.34 pm atop a 1-pm thick buried oxide. After the island, pwell, n-type extended drain, and field dielectric are defined, a 22.5-nm thick gate oxide is grown in steam, followed by the deposition of POCls-doped LPCVD polysilicon. The nominal gate length is 1.6 pm as defined by the spacing between the n-extended-drain and the n+ source. The effective channel width is over 150 mm.Partially-depleted SO1 transistors are susceptible to snapback [2] or singletransistor latch [3], which tends to worsen with temperature. Our design uses butting n+ and p+ regions on the source side to alleviate these floating body effects.The process also employs 100-nm of cobalt salicide to lower gate and source/drain 0-7803-4540-1/98/$10.00 0 1998 IEEE with 0.8 pm of nitride and 0.3 both deposited using a low-temperature plasma method. of oxide, To achieve a high blocking voltage, we use a lightly-doped n-type extended drain and terminate the polysilicon gate on a thicker field oxide on the drain side. Figure 1 shows a cross-section of the transistor.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.