We investigated the effect of process damage induced after capacitor etching procedures in the process of ferroelectric random access memory (FeRAM) fabrication for SrBi 2 Ta 2 O 9 capacitors. We found that this damage was suppressed by postmetallization annealing (400 C, 30 min in O 2 ) and that imprint characteristics were improved by the annealing, because active elements such as hydrogen and water induced during contact hole formation on tungsten plugs and first-metal formation are adsorbed effectively by the annealing before they penetrate into these capacitors.
A four-state lattice gas model is introduced in order to simulate the thermodynamical behaviour of simple fluids, nematic mixtures, and 3He-4He mixtures at variable pressure. The Ising-like Hamiltonian is treated in the molecular field approximation and various experimental phase diagrams are reproduced.
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