The strong fascination exerted by the binary compound of FeSe demands reliable engineering protocols and more effective approaches towards inducing superconductivity in FeSe thin films.Our study addresses the peculiarities in pulsed laser deposition which determine FeSe thin film growth and focuses on the film/substrate interface, the tendency for domain matching epitaxial growth but also the disadvantage of chemical heterogeneity. We propose that homogenization of the substrate surface improves the control of stoichiometry, texture, and nanostrain in a way that favors superconductivity even in ultrathin FeSe films. The controlled interface in FeSe/Fe/MgO demonstrates the proof-of-principle.
We demonstrate an amplitude-based bending/displacement sensor that uses a plastic photonic bandgap Bragg fiber with one end coated with a silver layer. The reflection intensity of the Bragg fiber is characterized in response to different displacements (or bending curvatures). We note that the Bragg reflector of the fiber acts as an efficient mode stripper for the wavelengths near the edge of the fiber bandgap, which makes the sensor extremely sensitive to bending or displacements at these wavelengths. Besides, by comparison of the Bragg fiber sensor to a sensor based on a standard multimode fiber with similar outer diameter and length, we find that the Bragg fiber sensor is more sensitive to bending due to the presence of a mode stripper in the form of a multilayer reflector. Experimental results show that the minimum detection limit of the Bragg fiber sensor can be as small as 3 μm for displacement sensing.
Anti-PbO-type FeSe shows an advantageous dependence of its superconducting properties with mechanical strain, which could be utilized as future sensor functionality. Although superconducting FeSe thin films can be grown by various methods, ultrathin films needed in potential sensor applications were only achieved on a few occasions. In pulsed laser deposition, the main challenges can be attributed to such factors as controlling film stoichiometry (i.e., volatile elements during the growth), nucleation, and bonding to the substrate (i.e., film/substrate interface control) and preventing the deterioration of superconducting properties (i.e., by surface oxidization). In the present study, we address various technical issues in thin film growth of FeSe by pulsed laser deposition, which pose constraints in engineering and reduce the application potential for FeSe thin films in sensor devices. The results indicate the need for sophisticated engineering protocols that include interface control and surface protection from chemical deterioration. This work provides important actual limitations for pulsed laser deposition (PLD) of FeSe thin films with the thicknesses below 30 nm.
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