Nematic states are characterized by rotational symmetry breaking without translational ordering. Recently, nematic superconductivity, in which the superconducting gap spontaneously lifts the rotational symmetry of the lattice, has been discovered. In nematic superconductivity, multiple superconducting domains with different nematic orientations can exist, and these domains can be controlled by a conjugate external stimulus. Domain engineering is quite common in magnets but has not been achieved in superconductors. Here, we report control of the nematic superconductivity and their domains of Sr x Bi 2 Se 3 , through externallyapplied uniaxial stress. The suppression of subdomains indicates that it is the Δ 4y state that is most favoured under compression along the basal Bi-Bi bonds. This fact allows us to determine the coupling parameter between the nematicity and lattice distortion. These results provide an inevitable step towards microscopic understanding and future utilization of the unique topological nematic superconductivity.
We seek for novel electronic phenomena by using external strain engineering, namely, by the application of external uniaxial strain. A piezoelectric-based uniaxial strain cell has been recently developed by Hicks et al. and successfully utilized for studies of various unconventional superconductors. Here, we propose a modified design that minimizes effects originating from the asymmetry of the strain cell design, in particular with minimal bending moments, by placing the sample at the axis of mirror symmetry of the device to balance out the reactive forces. Results of finite element analyses indicate that placing the sample offset to the axis of the mirror symmetry indeed causes an increase of strain inhomogeneity up to 10%, both at room temperature and at 4.2 K. Furthermore, we found that this bending reduces the overall achievable strain down to 30% of its maximal value without the bending. We also experimentally demonstrate the potential of our constructed device by tracking the displacement of the anvils of the strain cell with a parallel plate capacitor. The full range of motion of the piezo-stacks were demonstrated at room temperature. With a sample and at 0.9 K, we achieved a uniaxial strain of −1.5%, which is enough to induce electronic change in typical materials.
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