We propose reactive gases, which can be easily decomposed, as the etching gas to avoid “greenhouse effects.” In this article, the etching reaction between silicon and the trifluoro-acetyl-fluoride (CF3COF) gas is demonstrated, using a remote plasma at room temperature. The etching reaction is significantly enhanced by the addition of oxygen and remote-plasma excitation. The etch rate of silicon and oxide by CF3COF/O2 is larger than that by CF4/O2 and C2F6/O2 at the same O2 content. According to the optical emission study, however, the density of excited fluorine decreases in the plasma by the added oxygen into the CF3COF system. Photoelectron studies indicate that the major role of the additional oxygen is to remove the deposited fluorocarbon films from the surfaces.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.