Some cultured cell lines undergo typical apoptosis upon infection with influenza virus. However, the release of replicated virus into the culture medium does not change when apoptosis is inhibited. Since apoptotic cells are heterophagically eliminated at early stages of the apoptosis pathway, we anticipated that the coexistence of phagocytic cells with virus-infected cells affects the extent of virus growth. When influenza A virus-infected HeLa cells were mixed with activated mouse peritoneal macrophages, efficient phagocytosis, which was abrogated in the presence of a caspase inhibitor, occurred. At the same time, the release of virus into the culture medium was completely inhibited, and this required direct contact between virus-infected cells and macrophages. Furthermore, an immunoelectron microscopic analysis detected influenza virus particles associated with phagosome-like structures within macrophages. These results indicate that apoptosis-dependent phagocytosis of virus-infected cells may lead to direct elimination of the pathogen.
Influenza virus-infected cultured cells undergo apoptosis after an increment of Fas (APO-1/CD95) on the cell surface. By flow cytometry, cell surface Fas-ligand was detected in virusinfected cells with a time course similar to that of Fas. Moreover, Fas and Fas-ligand were co-expressed in those cells. The mode of induction, however, appeared to be distinct for the two proteins. Influenza virus infection induced the externalization of phosphatidylserine on the cell surface at the early stage of apoptosis, an event that has been observed in cells undergoing Fas-mediated apoptosis. In fact, apoptosis of the virus-infected cells was inhibited in the presence of an antagonistic anti-Fas-ligand monoclonal antibody. These results suggest that influenza virus infection causes augmented expression of both Fas and Fas-ligand and apoptosis is induced when the infected cells come into contact with each other.
To understand formation and deterioration mechanisms of Ta/Ti ohmic contacts that were previously developed for p-GaN, the electrical properties of the Ta/Ti contacts, which were deposited on undoped GaN substrates and subsequently annealed in vacuum (where a slash (/) sign indicates the deposition sequence), were studied. The Ta/Ti contacts displayed good ohmic behavior after annealing at a temperature of 800°C for 10 min in vacuum, although the undoped GaN substrates were used. However, deterioration of the present ohmic contacts was observed during room-temperature storage. These contact properties were similar to those observed in the Ta/Ti contacts prepared on p-GaN. Hall-effect measurements revealed that thin n-type conductive layers were found to form on surfaces of both the undoped GaN and p-GaN substrates after annealing at 800°C in vacuum.
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